Thin film transistor, method for manufacturing the same, and device comprising the same
US9461070B2 · kind B2 · utility
2Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2013 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Dec 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02565
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor is provided. An active layer (3) of the thin film transistor is made of an amorphous phosphide semiconductor material. Due to high carrier mobility of the phosphide semiconductor material, a thin film transistor with a high carrier mobility can be obtained by employing the amorphous phosphide semiconductor material to prepare the active layer of the thin film transistor. A method for manufacturing such a thin film transistor, and an array substrate and a display panel each comprising such a thin film transistor, are further provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.