Method of formation of a TI-IGBT

US9461116B2 · kind B2 · utility

Assignees

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN
• SHANGHAI LIANXING ELECTRONICS CO., LTD · CN
• JIANGSU CAS-IGBT TECHNOLOGY CO., LTD · CN

Inventors

• Yangjun Zhu · Beijing, CN
• Wenliang Zhang · Lo Wu, CN
• Shuojin Lu · Beijing, CN
• Xiaoli Tian · Shanghai, CN
• Aibin Hu · Beijing, CN

Key dates

• Filing date: Dec 6, 2012
• Grant date: Oct 4, 2016
• Expiry date: Dec 6, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/105
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A TI-IGBT, comprising a first semiconductor substrate, a second semiconductor substrate, and a first doped layer; a short circuit region and a collector region disposed in parallel are formed in the first semiconductor substrate; the short circuit region and the collector region have different doping types; the second semiconductor substrate is located on the upper surface of the first semiconductor substrate, and has the same doping type with the short circuit region; the first doped layer is located between the first semiconductor substrate and the second semiconductor substrate, and covers at least the collector region; the first doped layer has the same doping type with the second semiconductor substrate, and has a doping concentration smaller than that of the second semiconductor substrate.