Heterojunction field effect transistor

US9461158B2 · kind B2 · utility

Assignee

• SHARP KABUSHIKI KAISHA · JP

Inventors

• Norihisa Fujii · Nagoya, JP
• Tetsuzo Nagahisa · Osaka, JP
• Masaru Kubo · Kanmaki, JP

Key dates

• Filing date: Feb 28, 2014
• Grant date: Oct 4, 2016
• Expiry date: Feb 28, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/411

Abstract

A heterojunction field effect transistor includes a first contact portion and a second contact portion. A length of the first contact portion in a longitudinal direction is smaller than a length of source electrodes in the longitudinal direction, and a length of the second contact portion in the longitudinal direction is smaller than a length of drain electrodes in the longitudinal direction. For each drain electrode, a distance from ends of the second contact portion to ends of the drain electrode, the ends being outside of the second contact portion, is greater than a distance from ends of the first contact portion to ends of the source electrode, the ends being outside of the first contact portion.