Capacitor and semiconductor device using same

US9461184B2 · kind B2 · utility

Assignee

• FITIPOWER INTEGRATED TECHNOLOGY INC. · TW

Inventors

• Chun Yang · Hsinchu, TW
• Da Zhang · Hsinchu, TW

Key dates

• Filing date: Oct 9, 2013
• Grant date: Oct 4, 2016
• Expiry date: Feb 12, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/62

Abstract

A capacitor for a semiconductor device includes a bottom electrode plate, an insulating layer formed on the bottom electrode plate, and a top electrode plate formed on the insulating layer. The bottom plate includes a capacitor well and at least one diffused region formed on the capacitor well. A doping concentration of the at least one diffused region is higher than a doping concentration of the capacitor well, the capacitor well comprising a first well.