Thick damage buffer for foil-based metallization of solar cells

US9461192B2 · kind B2 · utility

Assignee

• SUNPOWER CORPORATION · US

Inventors

• David Fredric Joel Kavulak · Fremont, US
• Gabriel Harley · Mountain View, US
• Thomas Pass · San Jose, US

Key dates

• Filing date: Dec 16, 2014
• Grant date: Oct 4, 2016
• Expiry date: Dec 16, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. A method involves patterning a first surface of a metal foil to provide a plurality of alternating grooves and ridges in the metal foil. Non-conductive material regions are formed in the grooves in the metal foil. The metal foil is located above a plurality of alternating N-type and P-type semiconductor regions disposed in or above a substrate to provide the non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions and to provide the ridges in alignment with the alternating N-type and P-type semiconductor regions. The ridges of the metal foil are adhered to the alternating N-type and P-type semiconductor regions. The metal foil is patterned through the metal foil from a second surface of the metal foil at regions in alignment with the non-conductive material regions.