Backside transparent substrate roughening for UV light emitting diode
US9461198B2 · kind B2 · utility
20Cited by
31References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2015 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Jul 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
In the present invention, a fabrication process for epitaxy onto back-side patterned substrate, where the substrate patterns were defined prior to epitaxy and therefore simplify post growth processing. Specifically, for LED devices, said fabrication process reduces the post growth processing steps required to obtain high LEE due to strong scattering of the back-side features defined on the substrate. The features defined on the back-side patterned substrate scatters strongly with light emitted from the LED devices. Methods of obtaining such features include wet and dry etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.