Semiconductor light-emitting device
US9461209B2 · kind B2 · utility
3Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2015 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Sep 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.