Magneto-electronic devices and methods of production
US9461241B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2015 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Sep 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3286
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magneto-electronic device includes a first electrode, a second electrode spaced apart from the first electrode, and an electric-field-controllable magnetic tunnel junction arranged between the first electrode and the second electrode. The electric-field-controllable magnetic tunnel junction includes a first ferromagnetic layer, an insulating layer formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the insulating layer. The first and second ferromagnetic layers have respective first and second magnetic anisotropies that are alignable substantially parallel to each other in a first state and substantially antiparallel in a second state of the electric-field-controllable magnetic tunnel junction. A current of tunneling electrons through the insulating layer is greater in the first state than the second state, and a voltage applied between the first and second electrodes causes a change in at least one of a magnetic anisotropy energy, coercivity or domain wall velocity of at least one of the first and second ferromagnetic layers or a tunneling potential energy barrier through the insulating layer to at least assist in changing the electric-field-contr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.