Optoelectronic device

US9461262B2 · kind B2 · utility

Assignee

• Cambridge Display Technology Limited · GB

Inventors

• Surama Malik · Cambridge, GB
• Julian Carter · Chesterton, GB
• Laurence Scullion · Norton, GB
• Colin Baker · Cambridge, GB
• Arne Fleissner · Regensburg, DE
• Jeremy Burroughes · Cambridge, GB

Key dates

• Filing date: Mar 13, 2013
• Grant date: Oct 4, 2016
• Expiry date: Mar 13, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

This invention generally relates to an optoelectronic device and a method of fabricating such a device, and more particularly to an optoelectronic device comprising an anode layer, a semiconductive layer provided over the anode layer, and a cathode layer provided over the semiconductive layer, the anode layer comprising a plurality of electrically conductive tracks connected together and spaced apart from one another with gaps therebetween, the device further comprising a first and one or more further hole injection layers provided between the anode layer and the semiconductive layer and extending across said gaps, wherein the first hole injection layer has a conductivity greater than the conductivity of the one or more further hole injection layers.