Multi-step deep reactive ion etching fabrication process for silicon-based terahertz components

US9461352B2 · kind B2 · utility

Assignee

• CALIFORNIA INSTITUTE OF TECHNOLOGY · US

Inventors

• Cecile D. Jung-Kubiak · Pasadena, US
• Theodore Reck · Oak Ridge, US
• Goutam Chattopadhyay · Pasadena, US
• Jose Vicente Siles Perez · Pasadena, US
• Robert H. Lin · Chino, US
• Imran Mehdi · South Pasadena, US
• Choonsup Lee · La Palma, US
• Ken B. Cooper · Orange, US
• Alejandro Peralta · Tecate Mission Road, US

Key dates

• Filing date: Apr 15, 2014
• Grant date: Oct 4, 2016
• Expiry date: Apr 15, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01P11/002
• WIPO field: Telecommunications
• WIPO sector: Electrical engineering

Abstract

A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.