System and process for high-density, low-energy plasma enhanced vapor phase epitaxy
US9466479B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 11, 2013 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Dec 17, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/266
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for epitaxial deposition of compound semiconductor layers includes several steps. In a first step, a substrate is removably attached to a substrate holder that may be heated. In a second step, the substrate is heated to a temperature suitable for epitaxial deposition. In a third step, substances are vaporized into vapor particles, such substances including at least one of a list of substances, comprising elemental metals, metal alloys and dopants. In a fourth step, the vapor particles are discharged to the deposition chamber. In a fifth step, a pressure is maintained in the range of 10^−3 to 1 mbar in the deposition chamber by supplying a mixture of gases comprising at least one gas, wherein vapor particles and gas particles propagate diffusively. In a sixth optional step, a magnetic field may be applied to the deposition chamber. In a seventh step, the vapor particles and gas particles are activated by a plasma in direct contact with the sample holder. In an eighth step, vapor particles and gas particles are allowed to react, so as to form a uniform epitaxial layer on the heated substrate by low-energy plasma-enhanced vapor phase epitaxy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.