Semiconductor memory devices and methods of forming the same
US9466612B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2015 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Dec 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming semiconductor devices may be provided. A method of forming a semiconductor device may include patterning first and second material layers to form a first through region exposing a substrate. The method may include forming a first semiconductor layer in the first through region on the substrate and on sidewalls of the first and second material layers. In some embodiments, the method may include forming a buried layer filling the first through region on the first semiconductor layer. In some embodiments, the method may include removing a portion of the buried layer to form a second through region between the sidewalls of the first and second material layers. Moreover, the method may include forming a second semiconductor layer in the second through region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.