Image sensors including well regions of different concentrations and methods of fabricating the same
US9466636B2 · kind B2 · utility
0Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2015 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Jul 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
An image sensor includes a high concentration well region in contact with a device isolation layer extending along a periphery of a photoelectric converting part, which can improve dark current properties of the image sensor. The image sensor also includes a low concentration well region in contact with a sidewall of the device isolation layer overlapped with a transfer gate, which can improve image lag properties of the image sensor. Related fabrication methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.