Method of manufacturing semiconductor apparatus
US9466640B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2015 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Feb 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
A method of manufacturing a semiconductor apparatus, comprising forming a structure including an insulating layer on a substrate, and an electrode on the structure, forming an insulating first film covering the electrode and the structure, forming an opening in a projection, of the first film, formed by a step between upper faces of the electrode and the structure, to expose part of the upper face of the electrode as a first portion, forming a second film covering the first film and the first portion, forming a protective film in the opening by processing the second film, the protective film covering a side face defining the opening and the first portion and being not formed on an upper face of the projection, and forming a third film on the first film and the protective film by spin coating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.