Composite quantum-dot materials for photonics detectors
US9466745B2 · kind B2 · utility
15Cited by
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Key dates
| Filing date | Dec 11, 2015 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Dec 11, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/954
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of manufacturing a composite quantum-dot photodetector formed by alternatively dipping a substrate into a colloidal solution containing at least one type of a quantum dot, thereby forming a monolayer of the quantum dots and then dipping the substrate with the monolayer of the quantum dots into a ligand spacing solution to build a film of the quantum dots and then alternatively exposing the film of the quantum dots to a vapor and an infill material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.