Patent · US Active

Composite quantum-dot materials for photonics detectors

US9466745B2 · kind B2 · utility

15Cited by
0References
20Claims
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Assignee

Inventors

Key dates

Filing dateDec 11, 2015
Grant dateOct 11, 2016
Priority date
Expiry dateDec 11, 2035

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/954
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method of manufacturing a composite quantum-dot photodetector formed by alternatively dipping a substrate into a colloidal solution containing at least one type of a quantum dot, thereby forming a monolayer of the quantum dots and then dipping the substrate with the monolayer of the quantum dots into a ligand spacing solution to build a film of the quantum dots and then alternatively exposing the film of the quantum dots to a vapor and an infill material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.