Light emitting diode having well and/or barrier layers with superlattice structure
US9466761B2 · kind B2 · utility
22Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2008 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Dec 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A light emitting diode (LED) having well and/or barrier layers with a superlattice structure is disclosed. An LED has an active region between an N-type GaN-based semiconductor compound layer and a P-type GaN-based semiconductor compound layer, wherein the active region comprises well and/or barrier layers with a superlattice structure. As the well and/or barrier layers with a superlattice structure are employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.