Patent · US Active

Magnetic electronic device and manufacturing method thereof

US9466786B2 · kind B2 · utility

0Cited by

1References

6Claims

0Family size

Assignee

NATIONAL TSING HUA UNIVERSITY · TW

Inventors

Chih-Huang Lai · Baoshan, TW
Ding Wang · Beijing, CN

Key dates

Filing date	Jul 23, 2015
Grant date	Oct 11, 2016
Priority date	—
Expiry date	Jul 23, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/80
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A magnetic electronic device comprises a substrate, a first buffer layer, a first CoFeB layer, a first metal oxidation layer, a second buffer and a capping layer. The first buffer layer is disposed on the substrate. The first CoFeB layer is disposed on the first buffer layer. The first metal oxidation layer is disposed on the first CoFeB layer. The second buffer is disposed on the first metal oxidation layer, and the material of the second buffer layer includes platinum, palladium, tantalum or their any combination. The capping layer disposed on the second buffer. A manufacturing method of the magnetic electronic device is also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.