Surface-emitting semiconductor laser device and method for producing the same
US9466945B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Aug 17, 2015 |
| Grant date | Oct 11, 2016 |
| Priority date | — |
| Expiry date | Aug 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface-emitting semiconductor laser device includes a substrate and a semiconductor layer disposed on the substrate. The semiconductor layer includes a first semiconductor multilayer film of a first conductivity type, a first spacer layer, an active layer, a second spacer layer, and a second semiconductor multilayer film of a second conductivity type. The first semiconductor multilayer film and the second semiconductor multilayer film form a cavity. A peak of a pattern of a standing wave formed by the cavity and the center of the active layer are located at different positions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.