Abrasive particle, polishing slurry, and method of manufacturing semiconductor device using the same
US9469800B2 · kind B2 · utility
12Cited by
2References
17Claims
0Family size
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Inventor
Key dates
| Filing date | Sep 10, 2014 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Sep 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Provided are an abrasive particle including auxiliary particles formed on a surface of a mother particle, a polishing slurry prepared by mixing the abrasive particles with a polishing accelerating agent and a pH adjusting agent, and a method of manufacturing a semiconductor device in which an insulating layer is polished by the polishing slurry while using a conductive layer as a polishing stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.