Dopant feeder of ignot growing apparatus
US9469917B2 · kind B2 · utility
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2References
12Claims
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Assignee
Inventors
Key dates
| Filing date | Aug 10, 2012 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Jun 25, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1032
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is an ingot growing apparatus, which includes a crucible containing a silicon melt, a pulling device pulling a silicon single crystal ingot grown from the silicon melt, and a dopant supply unit disposed adjacent to the pulling device and for supplying a dopant during growing of the ingot. The neck portion may be doped at a concentration higher than that of the ingot through the dopant supply unit. Therefore, dislocation propagation velocity may be decreased and a propagation length may be shortened.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.