Method of programming a phase change memory and phase change memory device
US9472271B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 7, 2014 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Mar 31, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0083
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for pre-programming a matrix of phase-change memory cells, including a phase-change material positioned between two conducting electrodes and able to be reversely electrically modified so as to vary the resistivity of the memory cell. A dielectric layer is provided with the memory cell having an original resistive state at the end of the memory cell production process. A pre-programming of the matrix is executed prior to mounting a component containing the matrix on a support. A breakdown voltage is applied to a selection of memory cells so that, for each one of the selected cells, the layer of the dielectric material breaks down to bring the cell from the original resistive state to a second resistive state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.