Non-volatile memory device
US9472277B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 19, 2014 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Feb 19, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a non-volatile memory device includes: first memory cell regions including first wirings extending in a first direction, second wirings extending in a second direction crossing the first direction, and first memory cells provided between the first wirings and the second wirings and being capable of changing resistance state; and second memory cell regions including third wirings extending in the first direction, fourth wirings extending in the second direction crossing the first direction, and second memory cells provided between the third wirings and the fourth wirings and being capable of changing resistance state, the second memory cell region having a smaller area than the first memory cell region in top view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.