Plasma treated semiconductor dichalcogenide materials and devices therefrom
US9472396B2 · kind B2 · utility
2Cited by
2References
12Claims
0Family size
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Key dates
| Filing date | Apr 15, 2015 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Apr 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma-based processing method includes depositing a transition metal dichalcogenide (TMDC) material onto a substrate. The TMDC material is plasma treated in an oxygen containing ambient to oxidize the TMDC material to form oxidized dielectric TMDC material. The oxidized dielectric TMDC material has a higher electrical resistivity as compared an electrical resistivity of the TMDC material before the plasma treating, typically >103 times greater.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.