Semiconductor memory device and method of fabricating the same
US9472445B2 · kind B2 · utility
3Cited by
8References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2014 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Sep 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device including a substrate, a first element isolation film pattern, and a second element isolation film pattern. The substrate includes a first region and a second region. The first element isolation film pattern is in the first region and corresponds to a first active region. The second element isolation film pattern is in the second region and corresponds to a second active region. The first element isolation film pattern includes a first material and the second element isolation film pattern includes a second material different from the first material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.