Thin film transistor substrate, display apparatus having the same, and manufacturing method thereof
US9472577B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2014 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Jun 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/451
Abstract
Each pixel of a thin film transistor substrate includes a base substrate including a pixel display area and a pixel non-display area surrounding the pixel display area, a gate electrode on the base substrate in the pixel non-display area, a first insulating layer which is on the base substrate in the pixel non-display area and covers the gate electrode, a semiconductor layer on the first insulating layer, of which a predetermined portion thereof overlaps the gate electrode, a source electrode and a drain electrode which are spaced apart from each other and on the semiconductor layer, a second insulating layer which is on the first insulating layer and the base substrate and covers the source electrode and the drain electrode, and a pixel electrode on the second insulating layer in the pixel display area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.