Semiconductor device
US9472678B2 · kind B2 · utility
15Cited by
40References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2014 |
| Grant date | Oct 18, 2016 |
| Priority date | — |
| Expiry date | Dec 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
Abstract
To provide a transistor with stable electrical characteristics, a transistor with a low off-state current, a transistor with a high on-state current, a semiconductor device including the transistor, or a durable semiconductor device. The semiconductor device includes a first transistor using silicon, an aluminum oxide film over the first transistor, and a second transistor using an oxide semiconductor over the aluminum oxide film. The oxide semiconductor has a lower hydrogen concentration than silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.