Patent · US Active

Method of manufacturing compound thin-film photovoltaic cell

US9472698B2 · kind B2 · utility

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Key dates

Filing dateDec 6, 2013
Grant dateOct 18, 2016
Priority date
Expiry dateDec 6, 2033

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The method of manufacturing a compound thin-film photovoltaic cell includes preparing a metal substrate, whose main constituent is iron, containing aluminium (Al) and chromium (Cr), and forming an insulating layer on an element forming surface of the metal substrate by baking an insulating material; depositing first electrode layer on the insulating layer; depositing a compound light absorption layer on the first electrode layer; and depositing a second electrode layer on the compound light absorption layer, wherein in the forming the insulating layer, an alumina layer is formed at least on a back surface of the metal substrate by thermal oxidation while baking the insulating material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.