Patent · US Active

Integrated avalanche germanium photodetector

US9472705B2 · kind B2 · utility

0Cited by

2References

16Claims

0Family size

Assignees

IMEC VZW · BE
UNIVERSITEIT GENT · BE

Inventors

Hongtao Chen · Lo Wu, CN
Joris Van Campenhout · Brussels, BE
Günther Roelkens · Melle, BE

Key dates

Filing date	Dec 23, 2015
Grant date	Oct 18, 2016
Priority date	—
Expiry date	Dec 23, 2035

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/50
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An integrated avalanche photodetector and a method for fabrication thereof. The integrated avalanche photodetector comprises a Ge body adapted to conduct an optical mode. The Ge body comprises a first p-doped region that extends from a first main surface to a second main surface of the Ge body. The Ge body further comprises a first n-doped region that extends from the first main surface towards the second main surface of the Ge body. An intrinsic region occupies the undoped part of the Ge body. A first avalanche junction is formed by the first n-doped region that is located aside the p-doped region. The Ge body further comprises an incidence surface, suitable for receiving an optical mode, and a second n-doped Ge region that covers the Ge body and forms a second avalanche junction with the first p-doped region at the first main surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.