Semiconductor light emitting device

US9472712B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Satoshi Mitsugi · Kawasaki, JP
• Hiroshi Katsuno · Komatsu, JP

Key dates

• Filing date: Sep 3, 2015
• Grant date: Oct 18, 2016
• Expiry date: Sep 3, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/018

Abstract

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, an electrode pad, a first electrode, a second electrode and a layer. The semiconductor layer includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The electrode pad is provided in adjacent to the semiconductor layer. The first electrode is connected to the electrode pad with one end, extends from the electrode pad, and is connected to the first semiconductor layer. The second electrode is connected to the second semiconductor layer. The layer with lower conductivity is provided between part of the first semiconductor layer and part of the first electrode. The first electrode has an electrode width. The electrode width is in a direction perpendicular to a direction in which the first electrode extends. The electrode width decreases with distance from the electrode pad.