Patent · US Active

Deposition of semiconductor nanocrystals for light emitting devices

US9472723B2 · kind B2 · utility

1Cited by

0References

15Claims

0Family size

Assignee

Massachusetts Institute of Technology · US

Inventors

Vladimir Bulovic · Lexington, US
Katherine W. Song · Somerville, US
Ronny Costi · Rehovot, IL

Key dates

Filing date	Nov 27, 2013
Grant date	Oct 18, 2016
Priority date	—
Expiry date	Nov 27, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/549
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of depositing semiconductor nanocrystals on a surface can include applying a voltage to the nanocrystals.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.