Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition
US9478401B2 · kind B2 · utility
10Cited by
37References
32Claims
0Family size
Assignees
Inventor
Key dates
| Filing date | Jan 6, 2014 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Apr 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/466
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.