Patent · US Active

Semiconductor system for a current sensor in a power semiconductor

US9478613B2 · kind B2 · utility

0Cited by

1References

8Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Christian Pluntke · Hechingen, DE
Timm Hoehr · Reutlingen, DE
Thomas Jacke · Lörrach, DE
Frank Wolter · Munich, DE
Holger Ruething · Munich, DE
Guenther Koffler · Ledenitzen, AT

Key dates

Filing date	Jan 25, 2013
Grant date	Oct 25, 2016
Priority date	—
Expiry date	Feb 19, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D89/105
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A semiconductor system for a current sensor in a power semiconductor includes: on a substrate, a multiple arrangement of transistor cells having an insulated gate electrode, whose emitter terminals are connected in a first region via a first conductive layer to at least one output terminal and whose emitter terminals are connected in a second region via a second conductive layer to at least one sensor terminal, which is situated outside of a first cell region boundary, which encloses the transistor cells of the first region and the second region, a trench structure belonging to the first cell region boundary being developed between the transistor cells of the second region and the sensor terminal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.