Semiconductor device
US9478621B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2012 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Feb 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
The element electrodes of a semiconductor element are disposed in a cell region, while an outermost peripheral electrode electrically connected to a semiconductor substrate is disposed in a peripheral region. In the peripheral region, a second-conductivity-type layer is disposed above a super-junction structure. A potential division region is disposed above the second-conductivity-type layer to electrically connect the element electrodes and the outermost peripheral electrode and also divide the voltage between the element electrodes and the outermost peripheral electrode into a plurality of stages. A part of the potential division region overlaps the peripheral region when viewed from the thickness direction of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.