Semiconductor device with an interconnect structure and method for forming the same
US9478626B2 · kind B2 · utility
5Cited by
13References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2014 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Dec 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure and method for forming the semiconductor device structure are provided. The semiconductor device structure includes a substrate and a gate electrode formed on the substrate. The semiconductor device structure also includes a first contact structure including a first portion and a second portion. The first portion of the first contact structure is formed in the gate electrode, and the second portion is formed on the first portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.