Interface between a I/III/VI2 layer and a back contact layer in a photovoltaic cell
US9478695B2 · kind B2 · utility
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6References
9Claims
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Key dates
| Filing date | Nov 22, 2012 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Nov 22, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of manufacturing a I-III-VI2 layer with photovoltaic properties, comprising: The element VI usually diffuses into the contact layer (MO) during the heat treatment and combines with the metal to form a superficial layer (SUP) on the contact layer.In the method of the invention, the metal deposition comprises a step during which an additional element is added to the metal to form a compound (MO-EA), in the contact layer, acting as a barrier to the diffusion of the element VI, which allows precisely controlling the properties of the superficial layer, particularly its thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.