Light emitting device having a light extraction layer
US9478698B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2014 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Jul 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.