Group III-V/zinc chalcogenide alloyed semiconductor quantum dots
US9478700B2 · kind B2 · utility
10Cited by
1References
13Claims
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Key dates
| Filing date | Mar 13, 2014 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Jan 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A scalable method for the manufacture of narrow, bright, monodisperse, photo-luminescent quantum dots prepared in the presence of a Group II-VI molecular seeding cluster fabricated in situ from a zinc salt and a thiol or selenol compound. Exemplary quantum dots have a core containing indium, phosphorus, zinc and either sulfur or selenium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.