Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect
US9478729B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2015 |
| Grant date | Oct 25, 2016 |
| Priority date | — |
| Expiry date | Jul 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a magnetic memory device which additionally comprises a free magnetic layer constituting a horizontal direction variable magnetization layer having a fixed saturation magnetization value, whereby a switching current is markedly reduced as compared with conventional magnetic layers such that a high degree of integration of the device can be achieved and it is possible to lower a critical current density necessary for magnetization reversal thereby reducing the power consumption of the device. Also, a stray field effect occurring from a fixed magnetic layer is reduced such that a written magnetization data is thermally stable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.