Patent · US Active

Semiconductor laser

US9478943B2 · kind B2 · utility

1Cited by

3References

9Claims

0Family size

Assignee

Oulun yliopisto · FI

Inventors

Boris Ryvkin · Saint Petersburg, RU
Juha Kostamovaara · Oulu, FI

Key dates

Filing date	May 26, 2009
Grant date	Oct 25, 2016
Priority date	—
Expiry date	Sep 27, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/3213
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A single pulse semiconductor laser operating in the gain-switching regime comprises a plane asymmetric waveguide and an active layer in the waveguide, the ratio of a thickness of the active layer to an optical confinement factor of the laser being extremely large, larger than about 5 μm, for example.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.