Organosilicon compound, thin film forming composition using same, and organic thin film
US9481801B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2016 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Apr 27, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09D183/08
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention is intended to provide an organosilicon compound for forming a novel organic thin film having improved physical properties. An organosilicon compound of the present invention is an organosilicon compound represented by formula (I) R—(CH2)n—SiX3 (I) (wherein R represents an alkoxy group having 1 to carbon atoms or a phenyl group that optionally has a substituent, X represents a hydroxyl group or a hydrolyzable group, and n represents any integer from 17 to 24). An organic thin film can be formed by mixing the aforementioned organosilicon compound, a compound that can interact with the organosilicon compound, and water in an organic solvent to prepare an organic thin film forming solution, and bringing the organic thin film forming solution into contact with a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.