CMOS image sensor including infrared pixels having improved spectral properties, and method of manufacturing same
US9484377B2 · kind B2 · utility
4Cited by
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12Claims
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Key dates
| Filing date | Nov 15, 2013 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Nov 15, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2005/204
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.