Patent · US Active

Inducement of strain in a semiconductor layer

US9484434B2 · kind B2 · utility

0Cited by
8References
21Claims
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Key dates

Filing dateDec 11, 2013
Grant dateNov 1, 2016
Priority date—
Expiry dateMay 29, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/822
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Strain is induced in a semiconductor layer. Embodiments include inducing strain by, for example, creation of free surfaces.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.