Photoelectric conversion device
US9484476B2 · kind B2 · utility
0Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2012 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Sep 20, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
Abstract
It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles coupled together as a light-absorbing layer, each of the semiconductor particles including a group I-III-VI compound, each of the semiconductor particles having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.