Patent · US Active

Epitaxy substrate, method for producing an epitaxy substrate and optoelectronic semiconductor chip comprising an epitaxy substrate

US9484490B2 · kind B2 · utility

0Cited by

2References

17Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Joachim Hertkorn · Neukirchen, DE
Alexander Frey · Lappersdorf, DE
Christian Schmid · San Diego, US

Key dates

Filing date	Apr 24, 2013
Grant date	Nov 1, 2016
Priority date	—
Expiry date	Apr 24, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/24355
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An epitaxy substrate (11, 12, 13) for a nitride compound semiconductor material is specified, which has a nucleation layer (2) directly on a substrate (1) wherein the nucleation layer (2) has at least one first layer (21) composed of AlON with a column structure. A method for producing an epitaxy substrate and an optoelectronic semiconductor chip comprising an epitaxy substrate are furthermore specified.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.