Micro LED with wavelength conversion layer
US9484504B2 · kind B2 · utility
133Cited by
64References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 14, 2013 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | May 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting device and method of manufacture are described. In an embodiment, the light emitting device includes a micro LED device bonded to a bottom electrode, a top electrode in electrical contact with the micro LED device, and a wavelength conversion layer around the micro LED device. The wavelength conversion layer includes phosphor particles. Exemplary phosphor particles include quantum dots that exhibit luminescence due to their size, or particles that exhibit luminescence due to their composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.