Thin film transistor panel and method of manufacturing the same, and electronic device including the thin film transistor panel
US9484542B2 · kind B2 · utility
0Cited by
3References
16Claims
0Family size
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Key dates
| Filing date | Sep 18, 2013 |
| Grant date | Nov 1, 2016 |
| Priority date | — |
| Expiry date | Sep 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/125
Abstract
A thin film transistor panel includes a gate electrode on a substrate, a gate insulating layer on the gate electrode, an organic semiconductor overlapping with the gate electrode, a source electrode and a drain electrode electrically connected to the organic semiconductor, a fluorine-containing organic insulation layer covering the organic semiconductor, and a photosensitive organic insulation layer covering the fluorine-containing organic insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.