Ferroelectric film and method for manufacturing the same
US9486834B2 · kind B2 · utility
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1References
15Claims
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Key dates
| Filing date | Jul 29, 2011 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Nov 23, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (K1−XNaX)NbO3 film or a BiFeO3 film having a perovskite structure and a crystalline oxide preferentially oriented to (001) formed on at least one of the upper side and lower side of the (K1−XNaX)NbO3 film or BiFeO3 film, and X satisfies the formula below0.3≦X≦0.7.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.