Method for manufacturing SiC powders with high purity
US9487405B2 · kind B2 · utility
1Cited by
6References
9Claims
0Family size
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Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Mar 22, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B32/984
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed herein is a method for manufacturing SiC powders with a high purity, and more particularly, a method for manufacturing SiC powders with a high purity by reating a solid phase carbon source as raw materials with gas phase silicon sources generated from a starting material composed of metallic silicon and silicon dioxide powders and, in which it is easy to control the size and crystalline phase of the SiC powders by changing the compositions of the gas phase silicon source to the solid phase carbon source mole ratio, and the temperature and time for the heat treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.