Graphene for semiconductor co-doping boron and nitrogen at the same time and preparation method thereof
US9490040B2 · kind B2 · utility
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Key dates
| Filing date | Jan 26, 2015 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Feb 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are boron/nitrogen co-doped graphene for semiconductor applications and a method for producing the same. The boron/nitrogen co-doping allows the use of the doped graphene in a wider variety of applications, including semiconductors. In contrast, graphene structures produced by conventional methods have good physical, chemical, and electrical stability but cannot be used in semiconductor applications due to the absence of band gaps therein. In addition, the boron/nitrogen co-doping makes the doped graphene highly dispersible in organic solvents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.