Method for manufacturing semiconductor device
US9490127B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2015 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Jan 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/6834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes: forming a front surface structure of a semiconductor element on a front surface side of a semiconductor substrate; forming crystal defects in the semiconductor substrate by implanting charged particles into the semiconductor substrate; subjecting the semiconductor substrate to a heat treatment after having formed the crystal defects; attaching a supporting plate on the front surface side of the semiconductor substrate after the heat treatment; thinning the semiconductor substrate by grinding a back surface side of the semiconductor substrate to which the supporting plate has been attached; and forming a back surface structure of the semiconductor element on a back surface of the thinned semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.